Dual beam system

ABSTRACT

A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.

This application is a continuation of U.S. patent application Ser. No.11/641,540, filed on Dec. 18, 2006, which claims priority from U.S.patent application Ser. No. 10/889,967, filed on Jul. 13, 2004 andissued as U.S. Pat. No. 7,161,159, which claims priority from U.S.Provisional Pat. App. 60/487,792, filed Jul. 14, 2003, all of which arehereby incorporated by reference.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to charged particle beam systems, and inparticular to systems including an ion beam column and an electron beamcolumn using a magnetic objective lens.

BACKGROUND OF THE INVENTION

Charged particle beam systems are used in a variety of applications,including the manufacturing, repair, and inspection of miniaturedevices, such as integrated circuits, magnetic recording heads, andphotolithography masks. Dual beam systems often include a scanningelectron microscope (SEM) that can provide a high-resolution image withminimal damage to the target, and an ion beam system, such as a focusedor shaped beam system, that can be used to alter substrates and to formimages.

One common application for a dual beam system is to expose a buriedportion of a substrate and then to form an image of the exposed surface.For example, a focused or shaped ion beam can be used to make a verticalcut in a substrate to expose a cross sectional surface, and then anelectron beam can be scanned over the newly exposed surface to form animage of it.

One difficulty with such systems is that the final lens of the scanningelectron microscope produces a magnetic field, which alters thetrajectory of the ion beam and also interferes with various otherfunctions of the dual beam system. For example, an image or informationabout the composition of the substrate can be obtained by collectingsecondary particles ejected as the primary ion beam strikes target. Themagnetic field of the SEM, however, changes the path of the secondaryparticles and makes them difficult to collect.

When a work piece in a charged particle beam system is composed of aninsulating material, such as quartz, the work piece tends to accumulateelectrical charge that adversely affects the primary beams and secondaryparticles. One method of neutralizing the change entails the use of anelectron flood gun that directs electrons to the work piece toneutralize positive charge. An electron flood gun differs from anelectron microscope in that the flood gun lack precise optics optionsand produces a relatively broad beam of low energy electrons. Themagnetic field of the SEM changes the path of the neutralizing electronsfrom the flood gun and makes it difficult to direct them accuratelytoward the work piece.

A common solution to this problem of the magnetic field interference isto turn off the SEM when using the ion beam or when using certainfunctions of the ion beam system. For example, the SEM can be switchedoff to allow collection of the ion beam induced secondary particles orwhen using a charge neutralization flood gun. Turning the SEM lens onand off creates its own set of problems.

The magnetic objective lens of an SEM uses a significant electricalcurrent and therefore generates a significant amount of heat, the heatbeing proportional to the square of the current. The heat dissipated byan SEM causes components of the dual beam system to expand. Theresolution of an SEM, being on the order of magnitude of nanometersrequires a very stable physical platform, and the system thereforerequires a significant amount of time after being turned on to reachthermal equilibrium and become stable. As the resolution of systems hasincreased, stability has become more important, and longer waits arerequired. Charged particle beam systems were originally used only inlaboratories to analyze samples, and the time to reach thermalequilibrium was acceptable. Systems are now being used as productionequipment and such delays are unacceptable.

U.S. Pat. No. 4,345,152 for a “Magnetic Lens” describes an electron lensthat uses two coils having equal numbers of turns wound in oppositedirections. By altering the allocation of current between the two coils,the magnetic field could be adjusted to focus the electron beam whilemaintaining a constant total current, and therefore a constant heatoutput. Using two lenses of equal turns allows the magnetic field to bevaried or even cancelled without changing the total electrical currentin the lens. Thus, the magnetic field could be eliminated withoutchanging the heat output of the lens.

The surface viewed by the SEM is often oriented at a non-perpendicularangle to the SEM axis, so one part of the work piece is closer to thelens than another part. To compensate for the difference in distance,some SEMs change the focus of the objective lens during the scan and cantherefore produce a clearer image. This is often referred to as “dynamicfocusing.” Dynamic focusing requires the ability to rapidly change themagnetic field, which requires rapidly changing the electrical currentin the objective lens coils. The coil inductance, which is related tothe number of turns of the coil, resists a current change.

The two equal coils in U.S. Pat. No. 4,345,152 have high inductance andcannot be changed rapidly. It is also known to use a separate, smalllens for dynamic focusing. Such lenses have low inductance, but changingthe lens current changes the power dissipation of the lens, which canupset the thermal equilibrium of the system, thereby reducingresolution.

If one designed a dual beam system to compensate for the effects of aconstant magnetic field from the SEM objective lens, the problem wouldnot be solved completely, because the magnetic field is not constant. Tokeep the SEM in focus, the magnetic field of the objective lens ischanged depending upon the height of the work piece, the magnification,and the electron energy. In some system, it is possible to reduce theoperating variation in the magnetic field by using “retarding fieldoptics,” that is, changing the voltage of the work piece to change thefocus of the electron beam, rather than changing the magnetic field inthe objective lens. In many dual beam systems, the FIB is mountedvertically and the SEM is mounted at an angle to view to vertical crosssection cut by the FIB. A system in which the SEM is tilted cannoteasily use retarding field options, since the tilt eliminates thesymmetry of the retarding electric field and causes undesirableaberrations in the primary electron beam and difficulty in thecollection of secondary electrons.

SUMMARY OF THE INVENTION

An object of the invention is to provide a dual beam system in which anion beam can operate while the SEM lens has current flowing in it.

One aspect of the invention comprises a dual beam system in which theobjective lens of an SEM can be energized while other functions of thesystem can still be used. A preferred embodiment includes severalinventive aspects that are believed to be separately patentable. The SEMproduces a constant heat generation so that the system does not needextra time to reach thermal equilibrium when the magnetic field strengthis changed to focus the beam. In some embodiments, a chargeneutralization flood gun is positioned so that the magnetic field helpsto direct the neutralizing electrons to the target. In some embodiments,steering electrodes in the flood gun alter the beam direction tocompensate for changes in the magnetic field.

Some embodiments include a secondary particle detector that ispositioned such that the magnetic field of the SEM lens helps in thecollection of secondary particles. Another embodiment uses monoisotopicgallium that eliminates blurring of the ion beam caused by the differenteffects of the SEM magnetic field with the different isotopes ofgallium.

The foregoing has outlined rather broadly the features and technicaladvantages of the present invention in order that the detaileddescription of the invention that follows may be better understood.Additional features and advantages of the invention will be describedhereinafter. It should be appreciated by those skilled in the art thatthe conception and specific embodiment disclosed may be readily utilizedas a basis for modifying or designing other structures for carrying outthe same purposes of the present invention. It should also be realizedby those skilled in the art that such equivalent constructions do notdepart from the spirit and scope of the invention as set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more thorough understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows part of a dual beam system embodying aspects of theinvention

FIG. 2 shows a bottom perspective view of the part of the system shownin FIG. 1.

FIG. 3 shows the desired trajectories of neutralizing electrodes in amagnetic field.

FIG. 4 shows an electron flood gun that can be used with the system ofFIG. 1.

FIG. 5 shows an electron optical element used in the flood gun of FIG. 4

FIG. 6 shows a bottom view of the system of FIG. 1.

FIG. 7 shows a cross sectional view of a portion of the system of FIG.1.

FIG. 8 is a simulation showing the trajectories of ion beam inducedsecondary electrons in the presence of a magnetic field.

FIG. 9 shows the desired trajectories of secondary electrons in thepresence of magnetic field.

FIG. 10 is a simulation showing the preferred trajectories of secondarycharged particles in the presence of magnetic field.

FIG. 11 shows a preferred scanning electron microscope column used inthe system of FIG. 1.

FIG. 12 shows the trajectories of gallium ions in a focused ion beamusing a source composed of naturally occurring gallium.

FIG. 13A is a focused ion beam image formed using a beam of dualisotopic gallium in the presence of the minimum magnetic field producedby the magnetic objective lens of a nearby scanning electronmicroscopic. FIG. 13B is a focused ion beam image formed using a beam ofdual isotopic gallium in the presence of the maximum magnetic fieldproduced by the magnetic objective lens of a nearby scanning electronmicroscopic.

FIG. 14 shows the trajectories of gallium ions in a focused ion beamusing monoisotopic gallium.

FIG. 15A is a focused ion beam image formed using a beam of monoisotopicgallium in the presence of the minimum magnetic field produced by themagnetic objective lens of a nearby scanning electron microscopic. FIG.15B is a focused ion beam image formed using a beam of monoisotopicgallium in the presence of the maximum magnetic field produced by themagnetic objective lens of a nearby scanning electron microscopic.

FIGS. 16A and 16B show a docking mechanism that can be used in thesystem of FIG. 1. FIG. 16A shows the docking mechanism in isolation modeand FIG. 16B shows the docking mechanism in docking mode.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 shows a portion of a dual beam system 96 that includes a turret98 upon which are mounted an scanning electron microscope 100, an ionbeam column 102, a light microscope 105, one or more gas injectionsystems (GIS) 110, and an electron detector 114 that detects electronscollected through the lens of SEM 100 and deflected away from theprimary electron beam axis. FIG. 2 shows the same component as seen fromunderneath, that is, as seen from the work piece surface. A chargeneutralization flood gun 204 and a secondary particle detector 205, suchas a channel detector electron multiplier (CDEM) that detects particlesgenerated from the work piece by the impact of ions from ion beam column102, are visible in FIG. 2.

Although the ion beam and the electron beam ideally point to theidentical spot on the work piece, the physical sizes of the electronbeam column and the ion beam column typically prevent them from beingpositioned very close to the surface and directed toward the same targetspot. To have both beams pointing to the same spot, one or both beamsmust typically be backed away from the surface. Backing a column awayfrom the surface increases the working distance, that is, the from thecolumn final lens to the work piece surface. Increasing the workingdistance reduces the resolution of the column.

In a preferred embodiment that provides a short working distance forboth columns, the impact points from the SEM 100 and the FIB 104 areoffset from each other, for example, by about 50 mm. The work piece ismounted in a work piece holder or stage (not shown) that moves the workpiece rapidly and accurately between the two spots depending upon whichbeam is being used. As the stage moves in the X-Y plane to position thework piece under the appropriate beam column, the stage also movesvertically to compensate for variations in the surface height of thework piece. Such surface height variations can be caused, for example,by warp in a semiconductor wafer.

A height sensor, such as a capacitive sensor 206 (FIG. 2), detects achange in height of the work piece surface as the stage is moved andraises or lowers the stage so that the work piece does not collide withany of the instruments in the vacuum chamber and so that the work pieceis in focus regardless of which beam is being applied to the work piece.In one embodiment, the capacitive sensor 206 is conveniently mounted onand extends from optional optical microscope 105. The optical microscope105 can be used for preliminary alignment of the work piece.

The various components of the system, such as SEM 100, FIB 102, and GISs110, are mounted on turret 98, which comprises the upper portion of asample vacuum chamber. The turret includes various openings upon whichinstruments can be mounted or which can be readily sealed if not needed.By using such a turret, different charged particle beam systems can bereadily configured from the same basic system. For example, differenttypes of detectors or different numbers of gas injection systems can bemounted onto the turret to create a special or general purpose chargedparticle beam system, without having to design a system entirely fromscratch.

Flood Gun

The neutralizing electrons from the flood gun preferably land on thework piece at the point where the charge is accumulating, that is, nearthe impact point of the primary ion beam. The charge neutralizingelectrons also preferably land on the work piece with a minimum ofenergy. In a preferred system in which the SEM objective lens ismaintained in an energized state, the magnetic field from the objectivelens distorts the trajectory of electrons from flood gun 204 and canmake them miss the area to be neutralized. The magnetic field from theSEM objective lens is typically around 20 Gauss near the ion beam impactpoint on the work piece. During operation of the SEM objective lens, themagnetic field can vary by a factor of two or more, as the strength ofthe lens is adjusted to maintain focus under different conditions.

The magnetic field generated by the SEM objective lens affects theneutralizing electrons not only after they leave the flood gun, but alsowithin the flood gun as the electron beam is being produced. Although itwould be possible to shield the flood gun using a material of highmagnetization, referred to as a “mu-metal” material, such a magneticshield would alter the magnetic field in the vacuum chamber and wouldadversely affect the focusing of the SEM. One solution is to turn offthe SEM lens when using charge neutralization with the FIB beam but, asdescribed above, turning on and off the SEM objective lens upsets thethermal equilibrium of the system and necessitates a waiting period forthe system to reach thermal equilibrium.

A preferred embodiment overcomes this problem by using a two-foldapproach that allows charge neutralization in the presence of thevariable magnetic field of the SEM objective lens. The first aspectincludes positioning and orienting the flood gun in a manner thatconsiders the effect of the magnetic field. In other words, the floodgun is positioned and oriented so that the magnetic field acceleratesthe neutralizing electrons toward the target, rather than away from it.FIG. 3 shows schematically the trajectories 304 of the electrons fromflood gun 204 as influenced by a magnetic field 302 directed into theplane of the paper. By positioning the flood gun 204 in a preferredposition and orientation, electrons from the flood gun are impact thework piece surface 306 at the correct location and at a 90 degree angle.

The second aspect of compensating for the magnetic field includesdesigning the flood gun for operation in a magnetic field. FIG. 4 showsa flood gun 204 useful in connection with the invention. Flood gun 204includes two primary sections, a firing unit 404 comprising a tungstenwire that is heated to emit electrons, and anaccelerating/steering/focusing unit 406 that includes electron opticalparts that accelerate, steer, and focus the electrons. Both units aresupported on a bracket 408 that is mounted onto the vacuum chamber. Theflood gun 204 is preferably composed of non-magnetic materials to reducedistortion of the objective lens field.

Flood gun 204 includes steering electrodes that allow the beam ofelectrons to be directed. The beam is initially oriented to maximize thecharge neutralization with an average magnetic field present. Thisorientation can be determined empirically. As the magnetic field changeson the SEM lens, the trajectories of the electrons in the neutralizingbeam will change. The voltages on the steering electrodes are thenadjusted to slightly steer the electrons back to the target to effectcharge neutralization. The steering compensates to some extent for thedeviation from ideal flood gun position and orientation.

In a preferred embodiment, the same optical components can be used toboth focus and steer the electron beam. The preferred component includesa cylindrical electrostatic lens 502 that is split into four sections asshown in FIG. 5. A focusing voltage can be applied equally to the fourelements, and a steering voltage can be superimposed on top of thefocusing voltage on opposing elements. By using the same elements tosteer and accelerate the beam, the electron path within the flood gun iskept short by reducing the number of components. Keeping the electronpath within in the flood gun short reduces the time that the magneticfield acts on the electrons in the flood gun beam. In anotherembodiment, a curved flood gun can be used to compensate for the curvedelectron trajectory in the flood gun caused by the magnetic field.

The flood gun is also preferably positioned such that electrons leavingthe flood gun will be moved by the magnetic field toward the target,rather than away from the target. The preferred position of the floodgun varies with the specific application. The preferred position for theflood gun can be determined by performing a three dimensional simulationof the magnetic field generated by the SEM objective lens and combiningthat field with a three dimensional simulation of the electrostaticfield within the flood gun. For example, applicants used Munro electronbeam simulation software available from MEBS Ltd., London, UK tosimulate the electron trajectories in the various fields. Theconfiguration of the SEM objective gun lens is input into the MEBSprogram, and the program then determines the magnetic fields andcalculates the trajectory of the electrons from the flood gun. Theposition and orientation of the flood gun in the simulation can bealtered until the electrons land in the desired place.

FIGS. 6 and 7 show the preferred orientations of the flood gun 204 andother components in one embodiment having a vertical FIB column 102 andan SEM column 100 oriented at 45 degrees aimed at a spot about 50 mmfrom the FIB target on a work piece 600, for example, a 300 mm siliconwafer. The objective lens of SEM column 100 is positioned about 1.4 mmfrom the target point. FIG. 6 shows the orientation of the variouscomponents viewed from underneath, that is, with the axis of the ionbeam column 102 extending into the page. FIG. 7 shows a partial crosssectional view of the system of FIG. 6. FIG. 6 shows that the flood gun204 is preferably positioned in a vertical plane that is ninety degreesclockwise, when viewed from below, from the vertical plane containingthe SEM 100.

FIG. 7 shows that the flood gun 204 is oriented at an angle 702 ofpreferably about 40 degrees from the horizontal and that the end of theflood gun is positioned a distance 704 of about 8 mm from the target.FIG. 6 also shows part of the secondary particle detector 205 thatdetects electrons which were collected through the objective lens of theSEM and then were deflected off axis to a scintillator, which convertsthe electrons to light which is then routed out of the vacuum chambervia a light pipe to a detector.

Secondary Particle Detector for FIB

The FIB system typically includes a secondary particle detector 205,such as a channel detector electron multiplier (CDEM) that detectssecondary particles that are generated when ions in the primary ion beamimpact the work piece. Typically, such particle detectors can detecteither electrons or ions, depending upon the voltages applied to thecollector.

Another problem caused by the magnetic field of the SEM objective isthat some of the secondary particles emitted from the target aredeflected away from the input of the secondary particle detector. FIG. 8is a charged particle simulation, showing ion beam column 102, particledetector 205, and trajectories 802 of secondary electrons. Particledetector 205 includes a screen 804 held at a positive electricalpotential to attract electrons and an input 806 through which electronspass to enter detector 205. FIG. 8 shows that, in the presence of themagnetic field from the SEM objective lens, most of the electronsgenerated at the work piece surface by the impact of the ions in theprimary beam do not enter input 806 and are not therefore detected.

The problem is solved by strategically positioning the secondaryparticle detector, so that the magnetic field of the objective lensbends the trajectories of the secondary particles toward the input ofthe detector. The ideal position and orientation for the detector can bedetermined using a simulation in a manner similar to the manner in whichthe position of the flood gun above was positioned. FIG. 9 shows thatwith proper placement and orientation of the detector, secondaryparticles generated by primary ion beam 902 follow trajectories 904 thatlead them to the input of detector 205 in the presence of magnetic field302. FIG. 10 is a simulation showing trajectories 1002 of electronsgenerated by the impact of the primary ion beam from FIB 102. FIG. 10shows that all of the particles enter the input 806 of particledetector.

FIG. 6 shows that the secondary particle detector 205 is preferablylocated in a vertical plane that is perpendicular to a vertical planecontaining the SEM optical axis. If a flood gun is present, the particledetector is located in the same vertical plane as the flood gun, but onthe opposite side of the system, that is, the particle detector is in ahalf plane rotated 90 degrees clockwise (looking from above) from thehalf plane containing the SEM. FIG. 7 shows that the particle detectoris oriented at an angle 710 of about 30 degrees from the work piecesurface and that the detector is positioned a distance 712 of about 0.6mm above the surface of work piece 600. The FIB column 102 is positioneda distance 720 of about 16 mm above surface 600.

In another embodiment, a secondary particle detector 810 (shown indashed outline) could be positioned as shown in FIG. 8 at a place wherethe secondary particles would enter the detector, although this positioncould physically interfere with the flood gun, if one is present on thesystem.

SEM

One aspect of a preferred embodiment is the use of an SEM objective lensthat has relatively constant thermal signature, even as the magneticfield is adjusted to change the focus. By constant thermal signature ismeant that not only is the total power dissipation approximatelyconstant in time, but the power dissipations at all spatial positions onthe lens are also approximately constant in time. Such an SEM objectivelens is described in assignee's co-pending application entitled“Improved Magnetic Lens,” of Bierhoff et al., filed Jul. 14, 2003, whichis hereby incorporated by reference. The objective lens is preferablymaintained in an energized state with approximately a constant currentflowing through the SEM objective lens regardless of which beam is inuse, and chilled cooling water flowing constantly to cool the lens. Thesystem remains in thermal equilibrium and waits for the system tostabilize are eliminated.

FIG. 11 shows a preferred SEM column 100. The SEM includes a magneticobjective lens 1104 as described in the above-referenced patentapplication and preferably uses electrostatic deflection 1106. Usingelectrostatic deflectors allows both the electron beam and the ion beamto be controlled using similar mechanisms, which makes system operationeasier. Electrostatic deflectors also allow for fast scanning and do notproduce the heat variation of magnetic deflectors. If magneticdeflectors were used, the current in magnetic deflectors would need tochange as the magnification of the microscope is changed. Changing thedeflector current would change the heat output, which adversely affectsthe stability of the system.

Ion Beam

The magnetic field of the SEM lens also affects the trajectory of theions in the primary ion beam. Although it is possible to steer the ionbeam in a convention manner to compensate for the shift in positioncaused by the magnetic field, the resolution of the beam degrades in thepresence of the magnetic field. Applicants have found that by using aliquid metal ion source of monoisotopic gallium, the resolution of theion beam system is enhanced.

Naturally occurring gallium is dual isotopic, that is, it is a mixtureof two isotopes: one isotope, which comprises about 60 percent of theatoms in naturally occurring gallium, has an atomic mass of about 69 anda second isotope, which comprises about 40 percent of the atoms innaturally occurring gallium, has an atomic mass of about 71. The twoisotopes are deflected differently in a strong magnetic field, so thedifferent isotopes will split into two beams, which impact the target atslightly offset spots. This “double spot” results in poor image qualityand poor resolution micromachining.

FIG. 12 shows the path of gallium ions 1202 having an atomic mass ofabout 71 and gallium ions 1204 having an atomic mass of about 69 in themagnetic field 302 originating from the SEM objective lens. The magneticfield 302 is in a direction into the plane of the paper. FIGS. 13A and13B shows FIB images formed using naturally occurring, dual isotopicgallium ions from a gallium liquid metal ion source in the presence of amagnetic field from a SEM objective lens. In FIG. 13A, the magneticfield strength is at a minimum strength and the image is relativelysharp. In FIG. 13B, the magnetic field strength is at a maximumstrength, and the image is noticeably blurry.

FIG. 14 is similar to FIG. 12, but shows the use of monoisotopicgallium. Either of the two isotopes could be used. Monoisotopic galliumis used in time-of-flight mass spectrometers and so is readilyavailable. FIG. 14 shows that with monoisotopic gallium, there is asingle beam. FIGS. 15A and 15B shows FIB images formed usingmonoisotopic gallium ions from a gallium liquid metal ion source in thepresence of a magnetic field from a SEM objective lens. In FIG. 15A, themagnetic field strength is at a minimum strength and the image isrelatively sharp. In FIG. 15B, the magnetic field strength is at amaximum, and the image is still sharp.

Although the position of the beam landing will change as the magneticfield strength changes, the change in position can be compensated usingthe ion beam steering optics. There is no blurring in either image.Although monoisotopic gallium has been used in time-of-flight massspectrometers, to applicants' knowledge it was not used in dual beamsystems to overcome the problems caused by the action of the magneticfield on the gallium ion beam. FIG. 7 shows that the FIB is positioned adistance 714 of 16 mm above the surface of work piece 600.

Load Lock System

In a production environment, it is preferable that an operator canquickly move work pieces into and out of the dual beam system. Becausethe ion and electron beams operate in a vacuum chamber, it is necessaryto open the chamber to remove or insert a work piece, and then thesystem must be evacuated again. The evacuation process is timeconsuming.

FIGS. 16A and 16B are block diagrams showing a preferred system 1602that uses an “airlock” chamber 1604 that can be sealed and evacuatedseparately from a primary vacuum system 1606. A work piece can beinserted into the airlock chamber 1604, which is sealed and can beevacuated while the system 1602 is operating with a primary systemvacuum chamber 1606 that is evacuated. After the airlock chamber 1604 isevacuated, it can be opened to the primary system vacuum chamber 1606and work pieces can be exchanged between the two chambers withoutrequiring primary system vacuum chamber 1606 to be opened to theatmosphere. A robotic arm 1608 loads a work piece, such as wafer 1609,onto a wafer holder (not shown) in airlock chamber 1604. A frame 1612supports the primary vacuum chamber and the robotic arm 1608.

The airlock chamber 1604 preferably accommodates at least two workpieces, so that it can hold a new work piece and a completed work piece.The airlock chamber 1604 preferably has a small volume to reduce thetime required to evacuate it.

The high resolutions of the SEM and FIB make the system sensitive tovibration. The primary vacuum chamber 1606, to which the ion andelectron beam columns are mounted, “floats” on pneumatic cylinders 1610above the system frame 1612 to stop the transmission of vibration fromthe floor. System 1602 typically includes an automatic leveler (notshown) that adjusts the air in the pneumatic cylinders 1610 so that thevacuum chamber 1606 system is level as it floats. To move the work pieceto or from the airlock chamber 1604, it is necessary to “unfloat” theprimary chamber 1606 and precisely position the airlock chamber 1604 sothat the robotic arm 1608 can accurately locate and lift the work pieceinto or out of the airlock 1604. In the prior art, this alignmenttypically entailed deflating the pneumatic cylinders 1610 that supportsthe primary chamber 1606. Deflating the pneumatic cylinders 1610 takestime.

In a preferred embodiment, rather than deflating the pneumatic cylinders1610, the primary chamber 1606 is forced up into a mating position,rather than being lowered into a mating position. The chamber can beforced up, for example, using a pneumatic or hydraulic cylinder 1620, anelectric motor, or other means. The primary chamber 1606 is positioned,for example, by using two mating structures, one mating structure 1622mounted on the primary vacuum chamber 1606 and a second mating structure1624 mounted on the frame 1612.

For example, one or more acorn nuts mounted on the floating primarychamber can be forced into one or more mating holes mounted on the fixedsystem frame. Other alignment structures are well known. As the floatingportion is forced up, the acorn nuts are forced into holes to align theprimary chamber in three dimensions. One the airlock is aligned with theprimary vacuum chamber, a robotic arm 1608 mounted on the frame can movea work piece to the airlock and retrieve a wafer from the airlock.Preferably, the automatic leveling is turned off, and only the side ofthe primary chamber by the air lock is forced up. The slight angle ofthe primary chamber resulting from forcing only one side up does notinterfere with the work piece transfer. After the work pieces aretransferred, the primary chamber is released by cylinder 1620 andsettles back onto the pneumatic cylinders 1610, the automatic levelingis activated, and system operation can continue. By docking in the “up”position, a significant amount of time is saved by making it unnecessaryto deflate and then reinflate the pneumatic cylinders.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, compositionof matter, means, methods and steps described in the specification. Asone of ordinary skill in the art will readily appreciate from thedisclosure of the present invention, processes, machines, manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the present invention.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps.

1. A method of operating a dual beam system including an electronmicroscope using a magnetic objective lens and an ion beam system, themethod comprising: directing a beam of ions toward a work piece;applying a current to a magnetic objective lens of the electron beamcolumn concurrently with directing the beam of ions toward the workpiece, the current being the same current used when the electron beamcolumn is directing electrons toward the work piece, and varying thestrength of the focusing field while maintaining approximately constantpower dissipations at all spatial positions on the magnetic objectivelens.
 2. The method of claim 1 further comprising directing low energyelectrons towards the work piece to neutralize at least some charge onthe work piece while directing a beam of ions toward a work piece andwhile applying a current to a magnetic objective lens of the electronbeam column.
 3. The method of claim 2 in which directing low energyelectrons towards the work piece to neutralize at least a some charge onthe work piece includes deflecting low energy electrons using a steeringelectrode in a electron flood gun.
 4. The method of claim 1 furthercomprising collecting positively charged secondary ions generated by theimpact of ions in a primary ion beam.
 5. The method of claim 1 furthercomprising dynamically focusing the magnetic objective lens.
 6. Themethod of claim 1 in which directing a beam of ions toward a work pieceincludes directing a beam of monoisotopic gallium ions toward the workpiece.
 7. The method of claim 1 further comprising: providing primaryand secondary coil sections to the magnetic objective lens, the primarysection having an unequal number of coil turns from the secondarysection, and rapidly changing current in at least one of the primary orsecondary coils to dynamically focus the objective lens.
 8. A method ofoperating a dual beam system including an electron microscope using amagnetic objective lens and an ion beam system, the method comprising:directing a beam of ions toward a work piece; applying a current to amagnetic objective lens of the electron beam column concurrently withdirecting the beam of ions toward the work piece, the current being thesame current used when the electron beam column is directing electronstoward the work piece; forming a resultant beam focusing field byproviding the magnetic objective lens with primary and secondary coilsections, the primary section having an unequal number of coil turnsfrom the secondary section, and varying the strength of the focusingfield while maintaining approximately constant thermal signature in thecoils of the magnetic objective lens.
 9. The method of claim 8 furthercomprising implementing dynamic focusing with the magnetic objectivelens by providing a dynamic focusing current to one of the primary orsecondary coil sections.